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July 1996
NDS331N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very
small outline surface mount package.
Features
1.3 A, 20 V. R DS(ON) = 0.21 ? @ V GS = 2.7 V
R DS(ON) = 0.16 ? @ V GS = 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOT TM -3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS331N
20
8
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
1.3
A
- Pulsed
10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS331N Rev.E
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相关代理商/技术参数
NDS331N 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 20V 1.3A SUPER SOT
NDS331N_D87Z 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS331N_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS331N-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Sereis N-Channel 20 V 0.16O Enhancement Mode Field Effect Transistor SSOT-3
NDS332 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS332P 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes